Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs

Transport calculation of semiconductor nanowires coupled to quantum well reservoirs

Semiconductor nanowires are possible candidates to replace the metal-oxide-semiconductor field-effect transistors (MOSFET) since they can act both as active devices or as device connectors. In this article, the transmission coefficients of Si and GaAs nanowires with arbitrary transport directions and cross sections are simulated in the nearestneighbor sp3d5s∗ semi-empirical tight-binding method...

Thermal Transport in Semiconductor Nanowires

Quantum-well capture and interwell transport in semiconductor active layers

The dynamics of electrons and holes in multiquantum-well semiconductor gain media involves several different transport processes, such as diffusion and drift across the barrier region, as well as capture and escape transitions between the bound and the unbound states of the quantum wells. In addition to their fundamental interest, these processes are important because of their implications for ...

Multiple quantum well AlGaAs nanowires.

This letter reports on the growth, structure, and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy pe...

Quantum interference effects in InAs semiconductor nanowires

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